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IRFHM8337TRPBF hexfet ? power mosfet base part number ? package type ? standard pack form quantity irfhm8337pbf pqfn 3.3mm x 3.3mm tape and reel 4000 IRFHM8337TRPBF orderable part number v dss 30 v r ds(on) max (@ v gs = 10v) 12.4 ? (@ v gs = 4.5v) 17.9 qg (typical) 5.4 nc i d (@t c = 25c) 18 ? a m ??? ? pqfn 3.3 x 3.3 mm features benefits low thermal resistance to pcb (< 5.0c/w) enable better thermal dissipation low profile (<1.05 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1,consumer qualification increased reliability notes ? through ? are on page 8 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 12 a ? i d @ t a = 70c continuous drain current, v gs @ 10v 9.4 i dm pulsed drain current ? 94 ? i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 35 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 22 ?? i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 18 ? p d @t a = 25c power dissipation ? 2.8 w p d @t c(bottom) = 25c power dissipation ? 25 linear derating factor ? 0.02 w/c t j operating junction and -55 to + 150 c t stg storage temperature range applications ?? system/load switch, ?? charge or discharge switch for battery protection ? 1 2016-2-23
? IRFHM8337TRPBF 2 2016-2-23 static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 9.4 12.4 m ?? ? v gs = 10v, i d = 12a ? ?? ??? 14.5 17.9 v gs = 4.5v, i d =9.4a ? v gs(th) gate threshold voltage 1.35 1.8 2.35 v v ds = v gs , i d = 25a ? v gs(th) gate threshold voltage coefficient ??? -6.2 ??? mv/c i dss drain-to-source leakage current ? ??? ??? 1.0 a v ds = 24v, v gs = 0v ??? ??? 150 v ds = 24v, v gs = 0v,t j = 125c i gss gate-to-source forward l eakage ??? ??? 100 a v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs =-20 v gfs forward transconductance 17 ??? ??? s v ds = 15v, i d = 9.4a q g total gate charge ??? 5.4 8.1 q gs1 pre-vth gate-to-source charge ??? 1.1 ??? ? v ds = 15v q gs2 post-vth gate-to-source charge ??? 0.7 ??? nc v gs = 4.5v q gd gate-to-drain charge ??? 2.2 ??? ? i d = 9.4a q godr gate charge overdrive ??? 1.5 ??? ? q sw switch charge (q gs2 + q gd ) ??? 2.9 ??? ? q oss output charge ??? 3.8 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 2.0 ??? ? ? t d(on) turn-on delay time ??? 9.0 ??? v dd = 15v, v gs = 4.5v ? t r rise time ??? 11 ??? ns i d = 9.4a t d(off) turn-off delay time ??? 9.9 ??? ? r g = 1.3 ? t f fall time ??? 5.6 ??? ? c iss input capacitance ??? 755 ??? v gs = 0v c oss output capacitance ??? 171 ??? pf v ds = 15v c rss reverse transfer capacitance ??? 83 ??? ? ? = 1.0mhz ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 5.0 r ? jc (top) junction-to-case ? ??? 50 c/w r ? ja junction-to-ambient ? ??? 45 r ? ja (<10s) junction-to-ambient ? ??? 31 thermal resistance diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current ??? ??? 18 ? mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 94 ? integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c, i s = 9.4a, v gs = 0v ?? t rr reverse recovery time ??? 20 30 ns t j = 25c, i f = 9.4a, v dd = 15v q rr reverse recovery charge ??? 27 41 nc di/dt = 200a/s ? a ? avalanche characteristics ?? parameter typ. max. units e as single pulse avalanche energy ? ??? 13 mj d s g
? IRFHM8337TRPBF 3 2016-2-23 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v ? 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v ? 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 12a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0246810121416 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 9.4a
? IRFHM8337TRPBF 4 2016-2-23 fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 i d , d r a i n c u r r e n t ( a ) fig 9. maximum drain current vs. ambient temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r ma l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a fig 10. threshold voltage vs. temperature fig 11. maximum effective transient thermal impedance, junction-to-case 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec
? IRFHM8337TRPBF 5 2016-2-23 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.95a 3.63a bottom 9.40a fig 13. maximum avalanche energy vs. drain current fig 14. single avalanche event: pulse current vs. pulse width 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 35 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 12a t j = 25c t j = 125c fig 12. on? resistance vs. gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)
? IRFHM8337TRPBF 6 2016-2-23 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms
? IRFHM8337TRPBF 7 2016-2-23 placement and layout guidelines the typical application topology for this product is the sy nchronous buck converter. these converters operate at high frequencies (typically around 400 khz). during turn-on and turn-o ff switching cycles, the high di/dt currents circulating in the parasitic elements of the circuit in duce high voltage ringing which may exceed the device rating and lead to undesir- able effects. one of the major contri butors to the increase in parasitics is the pcb power circuit inductance. this section introduces a simple guideline that mitigates the e ffect of these parasitics on the performance of the circuit and provides reliable operation of the devices. to reduce high frequency switching noise and the effects of electromagnetic interference (emi) when the control mosfet (q1) is turned on, the layout shown in figur e 19 is recommended. the input bypass capacitors, control mosfet and output capacitors are placed in a tight loop to minimize parasitic inductance which in turn lowers the am- plitude of the switch node ringing, and minimizes exposure of the mosfets to repetitive avalanche conditions. when the synchronous mosfet (q2) is turned on, high average dc current flows through the path indicated in figure 19. therefore, the q2 turn-on path should be laid out with a tight loop and wide traces at both ends of the inductor to minimize loop resistance.
? IRFHM8337TRPBF 8 2016-2-23 for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techni ques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf pqfn 3.3 x 3.3 outline ?c? package details pqfn 3.3 x 3.3 outline ?g? package details 5 876 #1 3 24 #1 2 3 4 8765 5 876 13 24 1234 8765
? IRFHM8337TRPBF 9 2016-2-23 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 3.3 x 3.3 tape and reel bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimension design to accommodate the component width dimension design to accommodate the component lenght dimension design to accommodate the component thickness pitch between successive cavity centers overall width of the carrier tape bo w p 1 ao ko dimension (mm) code min max dimension (inch) min max 3.50 3.70 .138 .146 1.10 1.30 7.90 8.10 .043 .051 11.80 12.20 .311 .319 12.30 12.50 .465 .480 .484 .492 3.50 3.70 .138 .146 description w 1 qty 4000 reel diameter 13 inches ? ? ? note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 3.3 x 3.3 part marking xxxx ?yww? xxxxx international rectifier logo part number marking code (per marking spec) assembly site code (per scop 200-002) date code lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pin 1 identifier
? IRFHM8337TRPBF 10 2016-2-23 ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? higher qualification ratings may be ava ilable should the user have such requirements. please contact your international rect ifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. qualification information ? ? qualification level moisture sensitivity level pqfn 3.3mm x 3.3mm msl1 (per jedec j-std-020d ??? ) rohs compliant yes consumer ?? (per jedec jesd47f guidelines) notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? ? starting t j = 25c, l = 0.297mh, r g = 50 ? , i as = 9.4a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at tj of approximately 90c. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ?? calculated continuous current based on maxi mum allowable junction temperature. ? current limited to 18a by source bonding technology. ? pulse drain current is limited to 72a by source bonding technology.
? IRFHM8337TRPBF 11 2016-2-23 revision history date comments 6/5/2014 ?? updated schematic on page 1 ?? updated part marking on page 8 ?? updated tape and reel on page 9 7/1/2014 ?? remove ?sawn? package outline on page 8. 02/23/2016 ?? updated datasheet with corporate template ?? updated package outline to reflect the pcn # (241-pcn30-public) for ?option c? and ?option g? on page 8. published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

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